A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties
- Authors
- Lee, S.-Y.; Kim, T.-H.; Suh, D.-I.; Cho, N.-K.; Seong, H.-K.; Jung, S.-W.; Choi, H.-J.; Lee, S.-K.
- Issue Date
- Aug-2006
- Publisher
- ELSEVIER
- Citation
- CHEMICAL PHYSICS LETTERS, v.427, no.1-3, pp 107 - 112
- Pages
- 6
- Journal Title
- CHEMICAL PHYSICS LETTERS
- Volume
- 427
- Number
- 1-3
- Start Page
- 107
- End Page
- 112
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49808
- DOI
- 10.1016/j.cplett.2006.05.133
- ISSN
- 0009-2614
1873-4448
- Abstract
- We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of similar to 80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures. (c) 2006 Elsevier B.V. All rights reserved.
- Files in This Item
-
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.