Effects of Oxygen Injection Rates on a-IGZO Thin-film Transistors with Oxygen Plasma TreatmentEffects of Oxygen Injection Rates on a-IGZO Thin-film Transistors with Oxygen Plasma Treatment
- Authors
- Lee, Jae-Yun; Heo, Kwan-Jun; Choi, Seong-Gon; Ryu, Heung Gyoon; Koh, Jung-Hyuk; Kim, Sung-Jin
- Issue Date
- Jun-2021
- Publisher
- 대한전자공학회
- Keywords
- IGZO thin-film; transistor; MIM structure; oxygen plasma
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.3, pp 189 - 198
- Pages
- 10
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 21
- Number
- 3
- Start Page
- 189
- End Page
- 198
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49887
- DOI
- 10.5573/JSTS.2021.21.3.189
- ISSN
- 1598-1657
2233-4866
- Abstract
- In this study, investigate the influence of oxygen plasma treatment on the oxide channel layer of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors based on the amount of oxygen gas injected. The a-IGZO channel layer thin-film transistors (TFTs) were fabricated with plasma treatment of zero, three, six, or nine standard cubic centimeters per minute (sccm) of oxygen gas injection into the a-IGZO channel layer using gun-type plasma cells from a molecular beam epitaxy system after the post-annealing process. In this experiment, oxygen plasma treatment on the a-IGZO channel layer improved the electrical and surface-area performance. Of all the treatment conditions, the a-IGZO channel layer TFT treated with plasma from an injection of 6 sccm of oxygen gas showed excellent transfer characteristics. They include saturation mobility of 14.4 cm2/Vs, a threshold voltage of 4.5 V, an on/off current ratio of 1.1 × 108, and an inverse subthreshold slope of 0.7 V/dec. Surface morphology analyses confirmed that increases in the oxygen gas injection rate decreased. A dynamic inverter test was conducted by configuring the logic circuit for the a-IGZO channel layer TFT, which verified the possibility for future application of the backplane device in active-driven displays.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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