Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition
- Authors
- Kang, D. S.; Cheong, M. G.; Lee, S.-K.; Suh, E.-K.; Hong, C.-H.; Lee, H. J.
- Issue Date
- Oct-2004
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.12, pp 2759 - 2762
- Pages
- 4
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Volume
- 241
- Number
- 12
- Start Page
- 2759
- End Page
- 2762
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50376
- DOI
- 10.1002/pssb.200405115
- ISSN
- 0370-1972
1521-3951
- Abstract
- InGaN/GaN quantum well light emitting diodes (LEDs) were grown with p-GaN layers of varied Mg impurity content. As the concentration of Mg impurity increases, the hole concentration increases up to a critical Mg impurity density and then decreases with further increase of the impurity. In this work, it is proposed that the accepters form the impurity band and that the band behavior with Mg content variation is attributed to the properties of the p-GaN layer and the p-layer effect on the I-V characteristics of LED.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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