Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide
- Authors
- Lee, S.-K.; Zetterling, C.-M.; Danielsson, E.; Ostling, M.; Palmquist, J.-P.; Hogberg, H.; Jansson, U.
- Issue Date
- Sep-2000
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.77, no.10, pp 1478 - 1480
- Pages
- 3
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 77
- Number
- 10
- Start Page
- 1478
- End Page
- 1480
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50378
- DOI
- 10.1063/1.1290690
- ISSN
- 0003-6951
1077-3118
- Abstract
- We report on the investigation of epitaxial TiC ohmic contacts to Al ion implanted 4H-SiC. TiC ohmic contacts were formed by coevaporation of Ti and C-60 at low temperature (< 500 degrees C). A sacrificial silicon nitride (Si3N4) layer was deposited on the silicon carbide substrate prior to Al implantation in order to reach a high Al dopant concentration at the surface while maintaining a low dose. The combination of epitaxially grown TiC and the silicon nitride layer resulted in a promising scheme to make low resistivity ohmic contacts. The lowest contact resistivity (rho(C)) and sheet resistance (R-s) of the implanted layer at 25 degrees C were as low as 2 x 10(-5) Ohm cm(2) and 0.6 k Ohm/square, respectively. (C) 2000 American Institute of Physics. [S0003-6951(00)01036-6].
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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