A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs

Abstract

A full analytical model of fringing-field-induced parasitic capacitance was developed. Compared with our previous compact model, we analytically modeled the capacitance between gate electrode and source/drain including metal electrode filled in the contact holes. We used more proper conformal mapping without using approximated boundary conditions between electrode contacts. This model matches well with simulation results even when the geometrical parameters are reduced to sub-nanometers level.