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The 1/f Noise and Random Telegraph Noise Characteristics in Floating-Gate NAND Flash Memories
- Authors
- Bae, Sung-Ho; Lee, Jeong-Hyun; Kwon, Hyuck-In; Ahn, Jung-Ryul; Om, Jae-Chul; Park, Chan Hyeong; Lee, Jong-Ho
- Issue Date
- Aug-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Floating gate (FG); low-frequency noise (LFN); NAND Flash memory; program/erase (P/E) cycling; random telegraph noise (RTN); threshold voltage fluctuation; 1/f noise
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.8, pp 1624 - 1630
- Pages
- 7
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 56
- Number
- 8
- Start Page
- 1624
- End Page
- 1630
- ISSN
- 0018-9383
1557-9646
- Abstract
- We have characterized low-frequency noise (LFN) such as 1/f noise and random telegraph noise (RTN) in a NAND Flash memory cell string for the first time and shown its fundamental properties. The NAND Flash memory cells showed specific LFN characteristics under various conditions such as bit-line bias, word-line bias of a selected cell, and pass bias of the unselected cells in the NAND string. Also, LFN was investigated with the program/erase (P/E) cycling of a cell or all cells in a string, and maximum threshold voltage fluctuation of several tens of millivolts after similar to 100 000 cycles at the 70-nm technology node was shown. Finally, we predicted the effects of LFN in sub-70-nm NAND Flash memories.
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