Low-Frequency Noise in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
- Authors
- Lee, Jeong-Min; Cheong, Woo-Seok; Hwang, Chi-Sun; Cho, In-Tak; Kwon, Hyuck-In; Lee, Jong-Ho
- Issue Date
- May-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous indium-gallium-zinc oxide (a-IGZO); low-frequency noise (LFN); mobility fluctuation; thin-film transistors (TFTs); 1/f noise theory
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp 505 - 507
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 30
- Number
- 5
- Start Page
- 505
- End Page
- 507
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50719
- DOI
- 10.1109/LED.2009.2015783
- ISSN
- 0741-3106
1558-0563
- Abstract
- We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (S-iD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f(gamma) power law with gamma similar to 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (Si-D/I-D(2)) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of Si-D/I-D(2) is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs.
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