Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- Authors
- Lee, Jeong-Min; Cho, In-Tak; Lee, Jong-Ho; Kwon, Hyuck-In
- Issue Date
- Sep-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.9
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 9
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50723
- DOI
- 10.1063/1.2977865
- ISSN
- 0003-6951
1077-3118
- Abstract
- The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions. (c) 2008 American Institute of Physics.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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