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Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

Authors
Gundlach, D. J.Royer, J. E.Park, Sung KyuSubramanian, S.Jurchescu, O. D.Hamadani, B. H.Moad, A. J.Kline, R. J.Teague, L. C.Kirillov, O.Richter, C. A.Kushmerick, J. G.Richter, L. J.Parkin, S. R.Jackson, T. N.Anthony, J. E.
Issue Date
Mar-2008
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE MATERIALS, v.7, no.3, pp 216 - 221
Pages
6
Journal Title
NATURE MATERIALS
Volume
7
Number
3
Start Page
216
End Page
221
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51114
DOI
10.1038/nmat2122
ISSN
1476-1122
1476-4660
Abstract
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
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Park, Sung Kyu
창의ICT공과대학 (전자전기공학부)
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