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Ink-Jet-Printed Zinc-Tin-Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process
- Authors
- Kim, Yong-Hoon; Kim, Kwang-Ho; Oh, Min Suk; Kim, Hyun Jae; Han, Jeong In; Han, Min-Koo; Park, Sung Kyu
- Issue Date
- Aug-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ink-jet printing; rapid thermal annealing; thin-film transistor; zinc-tin-oxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.31, no.8, pp 836 - 838
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 31
- Number
- 8
- Start Page
- 836
- End Page
- 838
- ISSN
- 0741-3106
1558-0563
- Abstract
- We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (alpha-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed alpha-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 mu m/10 mu m) have shown a carrier mobility of 4.98 cm(2)/V . s with an on/off current ratio that is greater than 10(9) and a subthreshold slope of 0.92 V/dec. The alpha-ZTO TFT-based inverter operation was good with acceptable logic level conservation.
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