Fast, simple ZnO/organic CMOS integrated circuits
- Authors
- Mourey, Devin A.; Park, Sung Kyu; Zhao, Dalong A.; Sun, Jie; Li, Yuanyuan V.; Subramanian, Sankar; Nelson, Shelby F.; Levy, David H.; Anthony, John E.; Jackson, Thomas N.
- Issue Date
- Dec-2009
- Publisher
- ELSEVIER
- Keywords
- Inorganic-organic hybrid; Organic circuits; Organic thin film transistors; CMOs
- Citation
- ORGANIC ELECTRONICS, v.10, no.8, pp 1632 - 1635
- Pages
- 4
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 10
- Number
- 8
- Start Page
- 1632
- End Page
- 1635
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51190
- DOI
- 10.1016/j.orgel.2009.08.021
- ISSN
- 1566-1199
1878-5530
- Abstract
- Hybrid organic-inorganic CMOs thin-film circuits are a simple, potentially low-cost, approach for large-area, low-power microelectronic applications. We have used atmospheric pressure processes to deposit inorganic ZnO and organic diF TES-ADT semiconductor layers and an Al2O3 gate dielectric. The organic semiconductor uses a contact-treatment-related microstructure that allows circuits to operate without directly patterning the organic layer. Using a simple 4-mask process with bifunctional Ti/Au contacts for both ZnO and organic transistors, 7-stage ring oscillators were fabricated and operated at >500 kHz corresponding to a propagation delay of <150 ns/stage at a supply bias of 35 V. These are the fastest organic-inorganic CMOs circuits reported to date. (C) 2009 Elsevier B.V. All rights reserved.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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