All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors
- Authors
- Park, Sung Kyu; Kim, Yong-Hoon; Han, Jeong-In
- Issue Date
- Jun-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.12
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 42
- Number
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51202
- DOI
- 10.1088/0022-3727/42/12/125102
- ISSN
- 0022-3727
1361-6463
- Abstract
- We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mu m typically showed a mobility range 0.05-0.2 cm(2) V-1 s(-1) with an on/off ratio of more than 10(6).
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