Etch damage evaluation on (Bi4-xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources
DC Field | Value | Language |
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dc.contributor.author | Kim, Jong-Gyu | - |
dc.contributor.author | Kim, Gwan-Ha | - |
dc.contributor.author | Kim, Kyoung-Tae | - |
dc.contributor.author | Kim, Chang-Il | - |
dc.date.accessioned | 2021-12-22T03:40:10Z | - |
dc.date.available | 2021-12-22T03:40:10Z | - |
dc.date.issued | 2006-12 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.issn | 1873-4081 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52702 | - |
dc.description.abstract | The etching mechanism of (Bi4-xLax)Ti3O12 (BLT) thin films in Ar/Cl-2 inductively coupled plasma (ICP) and plasma-induced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl-2. From various experimental data, amorphous phases on the etched surface existed on both chemically and physically etched films, but the amorphous phase was thicker after the 80% Ar/ 20% Cl-2 process. Moreover, crystalline "breaking" appeared during the etching in Cl-2-containing plasma. Also the remnant polarization and fatigue resistances decreased more for the 80% Ar/20% Cl-2 etch than for pure Ar plasma etch. (c) 2006 Elsevier Ltd. All rights reserved. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Etch damage evaluation on (Bi4-xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.mssp.2006.10.034 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.9, no.6, pp 1108 - 1114 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000244261600046 | - |
dc.identifier.scopusid | 2-s2.0-33846084761 | - |
dc.citation.endPage | 1114 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1108 | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 9 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Bi4-xLaxTi3O12 | - |
dc.subject.keywordAuthor | Ar/Cl-2 plasma | - |
dc.subject.keywordAuthor | etch damage | - |
dc.subject.keywordAuthor | QMS | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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