Etch damage evaluation on (Bi4-xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources
- Authors
- Kim, Jong-Gyu; Kim, Gwan-Ha; Kim, Kyoung-Tae; Kim, Chang-Il
- Issue Date
- Dec-2006
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Bi4-xLaxTi3O12; Ar/Cl-2 plasma; etch damage; QMS
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.9, no.6, pp 1108 - 1114
- Pages
- 7
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 9
- Number
- 6
- Start Page
- 1108
- End Page
- 1114
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52702
- DOI
- 10.1016/j.mssp.2006.10.034
- ISSN
- 1369-8001
1873-4081
- Abstract
- The etching mechanism of (Bi4-xLax)Ti3O12 (BLT) thin films in Ar/Cl-2 inductively coupled plasma (ICP) and plasma-induced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl-2. From various experimental data, amorphous phases on the etched surface existed on both chemically and physically etched films, but the amorphous phase was thicker after the 80% Ar/ 20% Cl-2 process. Moreover, crystalline "breaking" appeared during the etching in Cl-2-containing plasma. Also the remnant polarization and fatigue resistances decreased more for the 80% Ar/20% Cl-2 etch than for pure Ar plasma etch. (c) 2006 Elsevier Ltd. All rights reserved.
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