Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

Abstract

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as similar to 1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of similar to 22 mu m and surface coverage of similar to 47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (similar to 100 nm)/p(++)-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of similar to 10(6), an off-state leakage current of less than 10(-12) A, and a field effect mobility of similar to 10.4 cm(2)/Vs at 300 K.