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Dry Etching of TaN Thin Films by Using an Inductively Coupled Plasma
- Issue Date
- Sep-2010
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Etching; TaN; Cl-2; plasma; barrier-layer
- Citation
- FERROELECTRICS, v.384, no.1 PART 5, pp 17 - 24
- Pages
- 8
- Journal Title
- FERROELECTRICS
- Volume
- 384
- Number
- 1 PART 5
- Start Page
- 17
- End Page
- 24
- ISSN
- 0015-0193
1563-5112
- Abstract
- In this study, etching characteristics of TaN for barrier-layer and SiO2 for hard mask were investigated by using the inductively coupled Cl-2-based plasma. Dry etching of the TaN was studied by varying Cl-2/Ar gas mixing ratio. The results showed that the best condition for the etch rate was at the Cl-2 only gas plasma. The chemical reaction on the surface of the etched TaN was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the surface of etched TaN thin film.
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