A study on the suppression of etch residues by O-2 gas addition in dry etching of Pt film
- Authors
- Kim, N.-H.; Kim, C.-I.; Chang, E.-G.; Kwon, K.-H.
- Issue Date
- Dec-1999
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, no.SUPPL. 4, pp S806 - S809
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 35
- Number
- SUPPL. 4
- Start Page
- S806
- End Page
- S809
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52983
- ISSN
- 0374-4884
1976-8524
- Abstract
- The properties of platinum etching were investigated using inductively coupled plasmas. However, problems such as low selectivity to oxide as an etching mask, low etch dope and the etch residues remaining on the pattern sidewall were presented. In this paper, the etching by O-2/Cl-2/Ar gas mixture was examined, And the residue-free surface and higher etch slope was observed through transmission electron microscope (TEM) and scanning electron microscopy (SEM). The selectivity to oxide as an etching mask increased without having to decrease the etch rate in 5 % additive O-2 gas. In order to investigate the residue composition, X-ray photoelectron spectroscopy (XPS) analysis was used. XPS surface analysis proved that even a little O-2 gas can remove the Pt-Cl compounds as residues on the etched surface.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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