Chemical Reaction on the Surface of As-Doped ZnO Thin Films during the Dry Etching Process
- Authors
- Kang, Chan-Min; Kim, Dong-Pyo; Um, Doo-Seung; Kim, Chang-Il
- Issue Date
- Mar-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO; ICP; Etch; XPS
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.3, pp 1002 - 1005
- Pages
- 4
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 54
- Number
- 3
- Start Page
- 1002
- End Page
- 1005
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52991
- DOI
- 10.3938/jkps.54.1002
- ISSN
- 0374-4884
1976-8524
- Abstract
- The etching properties of ZnO thin films in an inductively coupled Cl(2)/BCl(3)/Ar plasma (ICP) were studied in terms of the etch rate and the selectivity as functions of the gas mixing ratio, the ICP coil power and the dc bias voltage. A maximum etch rate of 425 nm/min was obtained for a mixture Of 10% Cl(2) gas addition to BCl(3)(80%)/Ar(20%) plasma. The X-ray photoelectron spectroscopy (XPS) analyses of the ZnO surfaces etched at various Cl(2)/(Cl(2)+BCl(3)+Ar) mixing ratios revealed the formation of ZnCl(x). and ClO(x), reaction by-products as a result of the increased etch rate with increasing Cl(2) addition, compared with 20% Ar/80% BCl(3) plasma etching. From the analysis of these data, we propose that the maximum etch rate may be explained by the concurrence of chemical and physical pathways in the ion-assisted chemical reaction.
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