Etching mechanism of (Ba,Sr)TiO3 films in high density Cl-2/BCl3/Ar plasma
- Authors
- Kim, S.B.; Lee, Y.H.; Kim, T.H.; Yeom, G.Y.; Kim, C.I.
- Issue Date
- Jul-2000
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.18, no.4, pp 1381 - 1384
- Pages
- 4
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
- Volume
- 18
- Number
- 4
- Start Page
- 1381
- End Page
- 1384
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53005
- DOI
- 10.1116/1.582358
- ISSN
- 0734-2101
1520-8559
- Abstract
- (Ba, Sr)TiO3 (BST) thin films have attracted great interest as new dielectric materials of capacitors for ultralarge-scale integrated dynamic random access memories such as 1 or 4 Gbit. In this study, inductively coupled BCl3/Cl-2/Ar plasmas was used to etch BST. The Cl-2/(Cl-2+Ar) was fixed at 0.2, and the BST thin films were etched by adding BCl3. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density was measured by OES as a function of BCl3 percentage in Cl-2/Ar. The cross section of BST thin films and residue remaining after the etch was investigated by scanning electron microscopy. The chemical reactions between BST and Cl-2 and the surface of BST films etched with different BCl3/Cl-2/Ar gas mixing ratios were investigated using x-ray photoelectron spectroscopy. (C) 2000 American Vacuum Society. [S0734-2101(00)14504-X].
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