Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory
- Authors
- Oh, CS; Kim, CI; Kwon, KH
- Issue Date
- Jul-2001
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.19, no.4, pp 1068 - 1071
- Pages
- 4
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
- Volume
- 19
- Number
- 4
- Start Page
- 1068
- End Page
- 1071
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53031
- DOI
- 10.1116/1.1376703
- ISSN
- 0734-2101
1520-8559
- Abstract
- Cerium oxide (CeO2) thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in metal-ferroelectric-insulator- silicon structures for ferroelectric random access memory applications. In this study, CeO2 thin films were etched with a Cl-2/Ar gas combination in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of Cl-2/(Cl-2 + Ar) while the other process conditions were fixed at rf power (600 W) dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of the CeO2 thin film was 230 Angstrom /min and the selectivity of CeO2 to YMnO3 was 1.83 at a Cl-2/(Cl-2 +Ar) gas mixing ratio of 0.2. The surface reaction of the etched CeO2 thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer analysis were compared with the results of XPS analysis and the Ce-Cl bonding was discovered at 176.15 (arnu). These results confirm that the Ce atoms of the CeO2 thin films react with chlorine and a compound such as CeCl remains on the surface of the etched CeO2 thin films. These products can be removed by Ar-ion bombardment. (C) 2001 American Vacuum Society.
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