Structure and dielectrical properties of (Pb,Sr)TiO3 thin films for tunable microwave device
- Authors
- Kim, KT; Kim, CI
- Issue Date
- Dec-2002
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- PbxSr1-xTiO3; sol-gel; thin film; tunability; dielectric properties
- Citation
- THIN SOLID FILMS, v.420-421, pp 544 - 547
- Pages
- 4
- Journal Title
- THIN SOLID FILMS
- Volume
- 420-421
- Start Page
- 544
- End Page
- 547
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53044
- DOI
- 10.1016/S0040-6090(02)00849-0
- ISSN
- 0040-6090
- Abstract
- The object of investigation is represented by PbxSr1-xTiO3 (PST) thin films, which were fabricated by the alkoxide-based solgel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showed typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Ph content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) parameter (FOM = (%) tunability/tan delta (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/Sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89%, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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