Ferroelectric properties of lanthanide-doped Pb(Zr-0.6,Ti-0.4)O-3 thin films prepared by using a sol-gel method
- Authors
- Son, Y.H.; Kim, K.T.; Kim, C.I.
- Issue Date
- Jul-2004
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp 1743 - 1745
- Pages
- 3
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 22
- Number
- 4
- Start Page
- 1743
- End Page
- 1745
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53090
- DOI
- 10.1116/1.1752893
- ISSN
- 0734-2101
1520-8559
- Abstract
- Ln (Er, Eu, Tb, Yb)-doped lead zirconate titanate [Pb-1.1(Zr0.6Ti0.4)O-3; PZT] thin films on Pt/Ti/SiO2 /Si substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60/40 and perovskite phase polycrystalline structure. The effect on the structural and electrical properties of films was measured according to additive compound. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Ln-doping. A PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol % of Ln. Ln-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film. (C) 2004.American Vacuum Society.
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