Etching characteristics of Au thin films using inductively coupled Cl-2/Ar plasma
- Authors
- Chang, Y.-S.; Kim, D.-P.; Kim, C.-I.; Sim, K.-B.; Chang, E.-G.
- Issue Date
- Feb-2003
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Au; XPS; etch; Cl-2/Ar; ICP
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.SUPPL.2, pp S791 - S794
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 42
- Number
- SUPPL.2
- Start Page
- S791
- End Page
- S794
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53096
- ISSN
- 0374-4884
1976-8524
- Abstract
- In this study, An thin films were etched with a Cl-2/Ar gas combination using inductively coupled plasma. The etch properties were measured for different gas mixing ratios of Cl-2/(Cl-2+Ar) while the other process conditions were fixed at a rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr and a substrate temperature of 30 degreesC. The highest etch rate of the An thin film was 3500 Angstrom/min and the selectivity of An to SiO2 was 4.4 at a Cl-2/(Cl-2+Ar) gas mixing ratio of 0.2. The surface reaction of the etched An thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a chemical reaction between Cl and An. Au-Cl is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment. We obtained the clean and steep profile.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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