Dry etching of (Pb,Sr)TiO3 thin films using inductively coupled plasma
- Authors
- Kim, GH; Kim, JS; Kim, KT; Kim, DP; Kim, CI
- Issue Date
- Jul-2005
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.23, no.4, pp 890 - 893
- Pages
- 4
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 23
- Number
- 4
- Start Page
- 890
- End Page
- 893
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53211
- DOI
- 10.1116/1.1881653
- ISSN
- 0734-2101
1520-8559
- Abstract
- In this study (Pb,Sr)TiO3 (PST) thin films were etched with inductively coupled Cl-2/(Cl-2+Ar) plasmas. The etch characteristics of PST thin films as a function of Cl-2 / (Cl-2 + Ar) gas mixtures were analyzed by using a quadrupole mass spectrometer. Systematic studies were carried out as a function of the etching parameters, including the radio frequency power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition Of Cl-2 to the Cl-2/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of a chemical reaction is relatively low due to low volatility of the etching products. (c) 2005 American Vacuum Society.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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