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Dry etching of magnesium oxide thin films by using inductively coupled plasma for buffer layer of MFIS structure

Authors
Kim, Gwan-HaKim, Chang-Il
Issue Date
Apr-2007
Publisher
ELSEVIER SCIENCE SA
Keywords
magnesium oxide; etching; inductively coupled plasma; Langmuir probe
Citation
THIN SOLID FILMS, v.515, no.12, pp 4955 - 4959
Pages
5
Journal Title
THIN SOLID FILMS
Volume
515
Number
12
Start Page
4955
End Page
4959
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53287
DOI
10.1016/j.tsf.2006.10.087
ISSN
0040-6090
1879-2731
Abstract
Magnesium oxide thin film has been widely used as a buffer layer and substrate for growing various thin film materials because of very low Gibbs free energy, low dielectric constant and low refractive index. The investigations of the MgO etching characteristics in BCl3/Ar plasma were carried out using the inductively coupled plasma system. It was found that the increasing BCl3 in the mixing ratio of BCl3/Ar plasma causes monotonic MgO etch rate. The results showed in the BCl3-rich plasma that the etching process is dominantly supplied by the chemical pathway through the ion-assisted chemical reaction. (c) 2006 Elsevier B.V. All tights reserved.
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Kim, Chang Il
창의ICT공과대학 (전자전기공학부)
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