Effects of Ultrasonication on the Electrical Performance of a-IGZO TFTs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jae-Yun | - |
dc.contributor.author | Heo, Kwan-Jun | - |
dc.contributor.author | Choi, Seong Gon | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.contributor.author | Kim, Sung Jin | - |
dc.date.accessioned | 2022-01-25T06:41:21Z | - |
dc.date.available | 2022-01-25T06:41:21Z | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.issn | 2233-4866 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54392 | - |
dc.description.abstract | In this study, investigate the effect of ultrasonication on the oxide channel layer of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) based on different processing times. The ultrasonication treatment was applied at 40 kHz for 0, 10, 20, and 40 min before post annealing. Ultrasonication improved the electrical and surface morphology properties of a-IGZO thin-film transistors. The a-IGZO TFTs that underwent ultrasonication for 10 min exhibited enhanced electrical performance (saturation mobilities of 11.9 cm2/Vs, current on/off ratio of 3.5 × 107, threshold voltage of 6.1 V, and subthreshold voltage of 0.65 V/dec). Moreover, the dynamic and static responses of a resistive load–type inverter based on a-IGZO with ultrasonication are examined. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Effects of Ultrasonication on the Electrical Performance of a-IGZO TFTs | - |
dc.title.alternative | Effects of Ultrasonication on the Electrical Performance of a-IGZO TFTs | - |
dc.type | Article | - |
dc.identifier.doi | 10.5573/JSTS.2021.21.2.157 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.2, pp 157 - 165 | - |
dc.identifier.kciid | ART002707868 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000744770900009 | - |
dc.identifier.scopusid | 2-s2.0-85126795178 | - |
dc.citation.endPage | 165 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 157 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 21 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | a-IGZO | - |
dc.subject.keywordAuthor | oxide | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | sonication | - |
dc.subject.keywordAuthor | morphology | - |
dc.subject.keywordPlus | HIGH-RESOLUTION | - |
dc.subject.keywordPlus | OXIDE TFT | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.