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Effects of Ultrasonication on the Electrical Performance of a-IGZO TFTsEffects of Ultrasonication on the Electrical Performance of a-IGZO TFTs
- Issue Date
- Apr-2021
- Publisher
- 대한전자공학회
- Keywords
- a-IGZO; oxide; thin-film transistor; sonication; morphology
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.2, pp 157 - 165
- Pages
- 9
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 21
- Number
- 2
- Start Page
- 157
- End Page
- 165
- ISSN
- 1598-1657
2233-4866
- Abstract
- In this study, investigate the effect of ultrasonication on the oxide channel layer of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) based on different processing times. The ultrasonication treatment was applied at 40 kHz for 0, 10, 20, and 40 min before post annealing. Ultrasonication improved the electrical and surface morphology properties of a-IGZO thin-film transistors. The a-IGZO TFTs that underwent ultrasonication for 10 min exhibited enhanced electrical performance (saturation mobilities of 11.9 cm2/Vs, current on/off ratio of 3.5 × 107, threshold voltage of 6.1 V, and subthreshold voltage of 0.65 V/dec). Moreover, the dynamic and static responses of a resistive load–type inverter based on a-IGZO with ultrasonication are examined.
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