In-Plane Seebeck Coefficients of Thickness-Modulated 2D PtSe2Thin Films
- Authors
- Kim, Gil-Sung; Park, No-Won; Kang, Min-Sung; Choi, Jae Won; Lee, Won-Yong; Lee, Sang-Kwon
- Issue Date
- Mar-2022
- Publisher
- American Chemical Society
- Citation
- Journal of Physical Chemistry C, v.126, no.8, pp 4150 - 4156
- Pages
- 7
- Journal Title
- Journal of Physical Chemistry C
- Volume
- 126
- Number
- 8
- Start Page
- 4150
- End Page
- 4156
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/55387
- DOI
- 10.1021/acs.jpcc.1c09500
- ISSN
- 1932-7447
1932-7455
- Abstract
- Two-dimensional (2D) PtSe2 is rapidly emerging as a promising candidate for developing devices that exhibit a significantly enhanced thermoelectric power factor because of its thickness-modulation-induced tunable semiconductor-to-semimetal transition characteristic. This interesting phenomenon motivated us to measure the in-plane Seebeck coefficients and electrical conductivities of large-area 2D PtSe2 thin films with approximately 2-15 nm thicknesses. We observed an outstanding in-plane Seebeck coefficient of ∼73.7 μV/K and a high electrical conductivity of ∼216 S/cm in the 9-nm-thick 2D PtSe2 film than in the ∼6-nm-thick 2D PtSe2 film at 300 K. Our observations suggest that thickness-dependent semiconductor-to-semimetal transitions in PtSe2-based materials offer a distinguishable advantage for enhancing the power factor of 2D PtSe2-based thermoelectric devices. ©
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