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In-Plane Seebeck Coefficients of Thickness-Modulated 2D PtSe2Thin Films

Authors
Kim, Gil-SungPark, No-WonKang, Min-SungChoi, Jae WonLee, Won-YongLee, Sang-Kwon
Issue Date
Mar-2022
Publisher
American Chemical Society
Citation
Journal of Physical Chemistry C, v.126, no.8, pp 4150 - 4156
Pages
7
Journal Title
Journal of Physical Chemistry C
Volume
126
Number
8
Start Page
4150
End Page
4156
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/55387
DOI
10.1021/acs.jpcc.1c09500
ISSN
1932-7447
1932-7455
Abstract
Two-dimensional (2D) PtSe2 is rapidly emerging as a promising candidate for developing devices that exhibit a significantly enhanced thermoelectric power factor because of its thickness-modulation-induced tunable semiconductor-to-semimetal transition characteristic. This interesting phenomenon motivated us to measure the in-plane Seebeck coefficients and electrical conductivities of large-area 2D PtSe2 thin films with approximately 2-15 nm thicknesses. We observed an outstanding in-plane Seebeck coefficient of ∼73.7 μV/K and a high electrical conductivity of ∼216 S/cm in the 9-nm-thick 2D PtSe2 film than in the ∼6-nm-thick 2D PtSe2 film at 300 K. Our observations suggest that thickness-dependent semiconductor-to-semimetal transitions in PtSe2-based materials offer a distinguishable advantage for enhancing the power factor of 2D PtSe2-based thermoelectric devices. ©
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