Metal-Oxide Thin-Film Transistors for Flexible Electronics
- Authors
- Kim, Y.-H.; Park, S.K.
- Issue Date
- Jan-2015
- Publisher
- wiley
- Keywords
- Amorphous silicon thin-film transistors (a-Si:H); Flexible electronics; Low-temperature polycrystalline silicon (LTPS); Metal-oxide (MO) semiconductors; Solution-processing; Sputtering technology; Thin-film transistors (TFTs); Vacuum deposition
- Citation
- Large Area and Flexible Electronics, pp 101 - 116
- Pages
- 16
- Journal Title
- Large Area and Flexible Electronics
- Start Page
- 101
- End Page
- 116
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/55982
- DOI
- 10.1002/9783527679973.ch2
- ISSN
- 0000-0000
- Abstract
- Flexible electronic devices have been extensively researched in industries and research institutions with an aim to create new conceptual electronics such as flexible and bendable devices. Metal-oxide (MO) semiconductors have attracted a great deal of interest because of their relatively high carrier mobility and better operational stability over amorphous silicon thin-film transistors (a-Si:H) and organic thin-film transistors (TFTs). The most intriguing advantages of using MO semiconductor TFTs in flat-panel displays is the large-area scalability by relatively simple fabrication processes compared to low-temperature polycrystalline silicon (LTPS) TFT technology. Vacuum deposition processes are now widely used in flat-panel display manufacturing, and sputtering technology is one of the most mature technologies among many other deposition techniques. Solution-processed MO TFT is becoming one of the essential technologies for future flexible electronics because of its high electrical performance with reasonable reliability. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA. All rights reserved.
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