Cl2/CF4/Ar 유도결합 플라즈마에 의해 식각된 SBT 박막의 표면 손상

Abstract

SrBi2Ta2O9 thin films were etched in Cl2/CF4/Ar inductively coupled plasma (ICP). The maximum etch rate was 1300 Å/min at 900 W ICP power in Cl2(20%)/CF4(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion (Ar+) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing 700 ℃ for 1 h in O2 atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and Cl2/CF4 /Ar plasma were recovered.