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Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
- Authors
- Lee, Shin Buhm; Chang, Seo Hyoung; Yoo, Hyang Keun; Yoon, Moon Jee; Yang, Sang Mo; Kang, Bo Soo
- Issue Date
- Nov-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Resistance switching; Memristor; Resistance random-access memory
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.6, pp 1515 - 1517
- Pages
- 3
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 6
- Start Page
- 1515
- End Page
- 1517
- ISSN
- 1567-1739
1878-1675
- Abstract
- We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiOx/Pt cell. For an asymmetric electrode configuration of Ti/SrTiOx/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiOx/Pt cell, O-2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS. (C) 2012 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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