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Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- Authors
- Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young; Park, So Jung; Kim, Gyu Tae; Yang, Sang Mo; Chae, Seung Chul; Yoo, Hyang Keun; Kang, Bo Soo; Lee, Myoung-Jae; Noh, Tae Won
- Issue Date
- Sep-2011
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- crossbar architecture; nanodevices; resistance switching; sneak path problem; titanium dioxide
- Citation
- Advanced Materials, v.23, no.35, pp 4063 - 4067
- Pages
- 5
- Journal Title
- Advanced Materials
- Volume
- 23
- Number
- 35
- Start Page
- 4063
- End Page
- 4067
- ISSN
- 0935-9648
1521-4095
- Abstract
- A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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