Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter

Abstract

The high reset current I(R) in unipolar resistance switching is a major obstacle to practical applications in memory devices. In particular, the first I(R) value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We find that the compliance current I(comp) is a critical parameter for reducing I(R) values in polycrystalline Pt/NiO(w)/Pt, Pt/SrTiO(x) /Pt, Ti/SrTiO(x)/Pt, Pt/TiO(y)/Pt and Pt/FeO(z)/Pt capacitors, which show unipolar resistance switching. We therefore introduce an improved, simple and easy-to-use I(comp) limiter that stabilizes the forming process by drastically decreasing the current overflow so as to precisely control the I(comp) and subsequent I(R) values.