Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping
- Authors
- Lee, S. B.; Kim, A.; Lee, J. S.; Chang, S. H.; Yoo, H. K.; Noh, T. W.; Kahng, B.; Lee, M-J.; Kim, C. J.; Kang, B. S.
- Issue Date
- Aug-2010
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.97, no.9
- Journal Title
- Applied Physics Letters
- Volume
- 97
- Number
- 9
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56875
- DOI
- 10.1063/1.3486460
- ISSN
- 0003-6951
1077-3118
- Abstract
- The high reset current, I-R, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, I-comp, can work as a crucial parameter to reduce I-R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for I-comp. By decreasing I-Comp with acceptor doping, we could reduce I-R in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in I-comp by carrier doping could be a viable alternative for reducing I-R in unipolar resistance switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3486460]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56875)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.