Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide
- Authors
- Koo, S.-M.; Lee, S.-K.; Zetterling, C.-M.; Ostling, M.
- Issue Date
- Sep-2002
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- metal-oxide-semiconductor; silicon carbide; dry etch; inductively coupled plasma
- Citation
- SOLID-STATE ELECTRONICS, v.46, no.9, pp 1375 - 1380
- Pages
- 6
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 46
- Number
- 9
- Start Page
- 1375
- End Page
- 1380
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56909
- DOI
- 10.1016/S0038-1101(02)00068-0
- ISSN
- 0038-1101
1879-2405
- Abstract
- The characteristics of metal-oxide-semiconductor (MOS) capacitors formed on inductively coupled plasma (ICP) etch-damaged SiC have been investigated. MOS capacitors were prepared by dry-oxidation on ICP-etch-damaged n- and p-type. 6H- and 4H-SiC. The effect of a sacrificial oxidation treatment on the damaged surfaces has also been examined. Capacitance-voltage and current-voltage measurements of these capacitors were performed and referenced to those of simultaneously prepared control samples without etch damage. The effective interface densities (N-IT) and fixed oxide charges (Q(V)) of etch-damaged samples have been found to increase while the breakdown field strength (E-BD) of the oxide decreases. The barrier height (phib) at the SiC-SiO2, interface, determined from a Fowler-Nordheim analysis, decreased for MOS capacitors on etch-damaged surfaces. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged SiC. (C) 2002 Elsevier Science Ltd. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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