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Enhancement of output intensity limit of semiconductor lasers by chemical passivation of mirror facets
- Authors
- Yoo, Jae Soo; Lee, Hong H.; Zory, Peter
- Issue Date
- Mar-1991
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.3, no.3, pp 202 - 203
- Pages
- 2
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 3
- Number
- 3
- Start Page
- 202
- End Page
- 203
- ISSN
- 1041-1135
1941-0174
- Abstract
- Chemical treatment of the mirror facets of semiconductor lasers is used to reduce nonradiative recombination centers, thereby enhancing their peak output power capabilities. Treatment of the surface with P2S5-NH4OH coupled with washing by (NH4)2S can more than double the output intensity limit. However, the enhancement that can be obtained on a consistent basis is lower.
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