고전계 노화 SiC-MOSFET 소자를 가지는 양방향 DC-DC 컨버터 특성 분석 연구open accessPerformance Analysis of Bidirectional DC-DC Converter With SiC-MOSFETs Aged by High Electric Field
- Authors
- 정재윤; 곽상신
- Issue Date
- Sep-2022
- Publisher
- Korean Institute of Electrical Engineers
- Keywords
- Aging; Bidirectional DC-DC converter; High electric field; SiC-MOSFET
- Citation
- Transactions of the Korean Institute of Electrical Engineers, v.71, no.9, pp 1243 - 1249
- Pages
- 7
- Journal Title
- Transactions of the Korean Institute of Electrical Engineers
- Volume
- 71
- Number
- 9
- Start Page
- 1243
- End Page
- 1249
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/59011
- DOI
- 10.5370/KIEE.2022.71.9.1243
- ISSN
- 1975-8359
2287-4364
- Abstract
- Recently, the use of Silicon-carbide Metal Oxide Semiconductor (SiC-MOSFET) with high frequency and low loss characteristics is increasing in power conversion systems. SiC-MOSFET is aged due to the kinetic energy of electrons and thermal stress. In this case, the aged SiC-MOSFET may not perform as expected and may cause a failure of the power conversion system. This can lead to personal injury and property damage, so it is very important to increase reliability by identifying and analysing the aging process of SiC-MOSFET. In this paper, changes in electrical characteristics due to SiC-MOSFET aging and changes in loss and efficiency of the power conversion system are verified through experiments and simulations. A high electric field aging methodology are used to accelerate the SiC-MOSFET aging. Thereafter, a change in loss occurring during device aging are measured through a double pulse test, and this is modeled. By applying the loss modeling result to a bidirectional DC-DC converter, loss changes and efficiency changes due to converter aging are analyzed to determine the effect of the SiC-MOSFET aging on the converter. Copyright © The Korean Institute of Electrical Engineers.
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