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전력용 MOSFET의 온-상태 저항 측정 및 노화 시험 환경 구축Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance
- Issue Date
- 2022
- Publisher
- 전력전자학회
- Keywords
- Power MOSFET; Integrated power module; Accelerated aging test; On-state resistance
- Citation
- 전력전자학회 논문지, v.27, no.3, pp 206 - 213
- Pages
- 8
- Journal Title
- 전력전자학회 논문지
- Volume
- 27
- Number
- 3
- Start Page
- 206
- End Page
- 213
- ISSN
- 1229-2214
2288-6281
- Abstract
- This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%–3% after 44-hour of the aging test.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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