Detailed Information
Cited 1 time in 
Cited 1 time in 
Cited 1 time in
Metadata Downloads
Etching Characteristics of Titanium Nitride in Chlorine-Based Plasma
- Authors
- Wang, Yi-Yu; Joo, Young-Hee; Kim, Chang-Il
- Issue Date
- Dec-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- TiN; XPS; AFM
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.12, pp 12933 - 12935
- Pages
- 3
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 12
- Start Page
- 12933
- End Page
- 12935
- ISSN
- 1533-4880
1533-4899
- Abstract
- In this study, we carried out an investigation on the etching characteristics of TiN thin films and the selectivity of TiN to PR in inductively coupled Cl-2/Ar plasma. The maximum etch rate of the TiN thin films was 27 nm/min for a gas-mixing ratio of 4:16 sccm (Cl-2/Ar). X-ray photoelectron spectroscopy analysis showed efficient destruction of the oxide bonds by ion bombardment as well as the accumulation of less-volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.
- Files in This Item
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.