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Optimization of Resistance Uniformity by the Surface Oxidation of Tantalum Nitride for Thin Film Resistors
- Authors
- Woo, Jong-Chang; Kang, Pil-Seung; Kim, Chang-Il
- Issue Date
- Dec-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Tantalum Nitride; AES; XRD; TCR; TEM
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.12, pp 12835 - 12838
- Pages
- 4
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 12
- Start Page
- 12835
- End Page
- 12838
- ISSN
- 1533-4880
1533-4899
- Abstract
- We investigated the oxidation of reactively-sputtered tantalum-nitride (TaN) thin films annealed at 350-450 degrees C in air by measuring the change in sheet resistance with respect to the process temperature and time for various film lengths. X-ray diffraction measurements revealed that the films were amorphous. The oxidation product was characterized with Auger electron spectroscopy (AES). We found that the changes in sheet resistance at various process temperatures and times were due to simultaneous changes in film resistivity as a result of oxygen dissolution into the film and oxide-scale growth.
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