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Generation of interface states due to quantum-dot growth in Au/GaAs Schottky Diode structures
- Issue Date
- Sep-2005
- Keywords
- GaAs; InAs; Interface states; Low-frequency noise; Quantum-dots; Random walk; Schottky diodes
- Citation
- AIP Conference Proceedings, v.780, pp 109 - 112
- Pages
- 4
- Journal Title
- AIP Conference Proceedings
- Volume
- 780
- Start Page
- 109
- End Page
- 112
- ISSN
- 0094-243X
- Abstract
- We investigated the low-frequency excess electrical noise characteristics of Au/GaAs Shottky diodes with and without self-assembled InAs quantum-dot layer grown by molecular beam epitaxy. The noise intensity shows 1/f behavior and non-quadratic current dependences. The current dependence is explained by the generation of interface states increasing toward the conduction band edge, in the diodes with quantum-dot layer, utilizing the model of random walk of electrons involving interface states. The extracted energy distributions of the interface states for the diodes with and without quantum-dot layer, are presented. © 2005 American Institute of Physics.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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