Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles
- Authors
- Kang, ES; Kang, JW; Hwang, HJ; Lee, JH
- Issue Date
- Jul-2000
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.18, no.4, pp 1338 - 1344
- Pages
- 7
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
- Volume
- 18
- Number
- 4
- Start Page
- 1338
- End Page
- 1344
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66220
- DOI
- 10.1116/1.582473
- ISSN
- 0734-2101
1520-8559
- Abstract
- In this article, we present a new one-dimensional (1D) dopant profile determination method, which extends to the quantitative three-dimensional (3D) dopant profile extraction. This nondestructive method, which is different from the common scanning capacitance microscopy (SCM) measurement/dopant extraction, can potentially measure real metal-oxide-semiconductor field-effect transistor devices having 3D structure. Through SCM modeling, we found that the depletion layer in silicon was of a form of a spherical capacitor with the SCM tip biased. Two-dimensional (2D) finite differential method code with a successive over relaxation (SOR) solver has been developed to model the measurements by SCM of a semiconductor wafer that contains an ion-implanted impurity region. Then, we theoretically analyzed the spherical capacitor and determined the total depleted-volume charge Q, capacitance C, and the rate of capacitance change with bias dC/dV. It is very important to observe the depleted carriers' movement in the silicon layer by applying the bias to the tip. So, we calculated the depleted-volume charge, considering different factors such as tip size, oxide thickness, and applied bias (dc + ac), which have an influence on potential and depletion charges. Finally, we developed a 1D inversion algorithm to convert the SCM output (dC/dV) into real dopant concentration, comparing the SCM signal output with the calculated dC/dV. Using the inversion modeling, we have quantitatively extracted the 1D dopant profile from the SCM dC/dV vs V curves. (C) 2000 American Vacuum Society. [S0734-2101(00)15504-6].
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