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Electrode dependence of resistance switching in NiO thin filmsopen access

Authors
Kim, D.-W.Shin, D.S.Chang, S.H.Park, B.H.Jung, R.Li, X.S.Kim, D.C.Lee, C.-W.Seo, S.
Issue Date
Oct-2007
Publisher
KOREAN PHYSICAL SOC
Keywords
resistance switching; NiO; current-voltage measurement
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.51, no.suppl.2, pp S88 - S91
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
51
Number
suppl.2
Start Page
S88
End Page
S91
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66412
DOI
10.3938/jkps.51.88
ISSN
0374-4884
1976-8524
Abstract
We report on the resistance switching behavior of NiO thin films grown on Pt bottom electrodes, with top electrodes of Pt, An and Ni. NiO/Pt films with all the top electrodes show reversible switching from high-resistance state (HRS) to low-resistance state (LRS) and vice versa during unipolar current-voltage (I - V) measurements. The resistance switching ratio of the Au/NiO/Pt structure is much smaller than those of others. The HRS I - V curve of the Au/NiO/Pt structure is linear, while those of Pt/NiO/Pt and Ni/NiO/Pt structures axe nonlinear. This result manifests the role of the top electrode material in the resistance switching behavior of the NiO thin films.
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자연과학대학 (물리학과)
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