Electrode dependence of resistance switching in NiO thin filmsopen access
- Authors
- Kim, D.-W.; Shin, D.S.; Chang, S.H.; Park, B.H.; Jung, R.; Li, X.S.; Kim, D.C.; Lee, C.-W.; Seo, S.
- Issue Date
- Oct-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- resistance switching; NiO; current-voltage measurement
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.51, no.suppl.2, pp S88 - S91
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 51
- Number
- suppl.2
- Start Page
- S88
- End Page
- S91
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66412
- DOI
- 10.3938/jkps.51.88
- ISSN
- 0374-4884
1976-8524
- Abstract
- We report on the resistance switching behavior of NiO thin films grown on Pt bottom electrodes, with top electrodes of Pt, An and Ni. NiO/Pt films with all the top electrodes show reversible switching from high-resistance state (HRS) to low-resistance state (LRS) and vice versa during unipolar current-voltage (I - V) measurements. The resistance switching ratio of the Au/NiO/Pt structure is much smaller than those of others. The HRS I - V curve of the Au/NiO/Pt structure is linear, while those of Pt/NiO/Pt and Ni/NiO/Pt structures axe nonlinear. This result manifests the role of the top electrode material in the resistance switching behavior of the NiO thin films.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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