Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect
- Authors
- Yun, Seokyeon; Mahata, Chandreswar; Kim, Min-Hwi; Kim, Sungjun
- Issue Date
- Mar-2022
- Publisher
- ELSEVIER
- Keywords
- Neuromorphic system; ZnO; Short-term memory; Memristor
- Citation
- APPLIED SURFACE SCIENCE, v.579
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 579
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/70149
- DOI
- 10.1016/j.apsusc.2021.152164
- ISSN
- 0169-4332
1873-5584
- Abstract
- We fabricated and characterized a Ni/ZnO/TiN memristor device designed to emulate an artificial synapse for use in a neuromorphic system. Chemical and material characterization was conducted using ultraviolet photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy. The device exhibited gradual resistive switching as a multi-level cell with an increase in the DC sweep voltage. Current decay was observed after the set process, indicating that it could feasibly be employed in short-term memory applications. We demonstrated both short-term memory and long-term memory behavior in the proposed device. Higher conductance was maintained via repetitive pulses with a high voltage and a short time interval, while conductance was lower when repetitive pulses with a low voltage and a short time interval were employed. Pulse interval-dependent paired-pulse facilitation characteristics were used to mimic an artificial synapse, with potentiation and depression observed over multiple cycles. We also evaluated the pattern-recognition accuracy of the proposed conductance modulation with degradation based on the short-term memory effect using a 784 x 10 cross-point array netlist and a SPICE resistor model.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.