Bilayer channel structure to improve the stability of solution-processed metal oxide transistors under AC stress
- Authors
- Park, Soyoon; Ho, Dongil; Park, Heon-Beom; Park, Sung Kyu; Kim, Choongik
- Issue Date
- Mar-2024
- Publisher
- Elsevier Ltd
- Keywords
- AC stress; Bilayer channel; Energy barrier; Hot carrier; Metal oxide; Thin film transistor
- Citation
- Materials Science in Semiconductor Processing, v.171
- Journal Title
- Materials Science in Semiconductor Processing
- Volume
- 171
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/70761
- DOI
- 10.1016/j.mssp.2023.108000
- ISSN
- 1369-8001
1873-4081
- Abstract
- In this work, we report solution-processed bilayer channel thin film transistors (TFTs) based on solution-processed amorphous oxide semiconductors (AOSs) that fulfill both superb electrical performance and device stability against applied alternating current (AC) drain bias stress. Acceptor-like states generation via hot carrier effect (HCE) is a representative device degradation mechanism suggested for AOS-based TFTs when subjected to AC bias stress, featuring threshold voltage (Vth) shift and on-current (Ion) lowering. As excess electric field and accumulated carriers in the AOS channel cause HCE, alleviating carrier accumulation is a key solution for mitigating HCE. Bilayer channel TFTs comprising two different AOSs could work as a countermeasure to overcome HCE since proper energy band alignment of two channels creates a conduction band difference that act as the energy barrier for carriers. In this regard, we employed amorphous indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) as bottom and top layer, respectively, for bilayer channel TFT. Designed bilayer channel showed a conduction band difference of 0.18 eV, and fabricated TFT based on this architecture exhibited high mobility over to 5.9 cm2/Vs with slight Vth shift of 0.1 V and Ion lowering of 1.7% for 1000 s against applied AC stress, demonstrating device stability under AC drain bias stress. © 2023 Elsevier Ltd
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