Controlling the magnetic properties of layered Cr2Te3 thin films via ex-situ annealingopen access
- Authors
- Lee, In Hak; Khim, Yeong Gwang; Eom, Jaeun; Kee, Jung Yun; Choi, Byoung Ki; Kim, Hyuk Jin; Kim, Ryung; Jung, Min Young; Lee, Kyeong Jun; Kim, Younghak; Noh, Woo-Suk; Lee, Byeong-hyeon; Suh, Hoyoung; Chang, Hye Jung; Won, Sung Ok; Jang, Chaun; Ryu, Hyejin; Lee, Dong Ryeol; Chang, Seo Hyoung; Lee, Hyun Hwi; Chang, Young Jun; Choi, Jun Woo
- Issue Date
- Mar-2024
- Publisher
- Elsevier B.V.
- Keywords
- Cr2Te3 thin films; Curie temperature; Ex-situ annealing; Lattice expansion; van der Waals magnetic materials
- Citation
- Applied Surface Science, v.648
- Journal Title
- Applied Surface Science
- Volume
- 648
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/71269
- DOI
- 10.1016/j.apsusc.2023.159057
- ISSN
- 0169-4332
1873-5584
- Abstract
- We present a post-growth ex-situ annealing method to control the Curie temperature and magnetic anisotropy of Cr2Te3 van der Waals ferromagnetic thin films. The as-grown Cr2Te3 films exhibit a Curie temperature ∼ 170 K with an out-of-plane magnetic easy axis. Upon high temperature (300 – 400 °C) ex-situ annealing, the magnetic phase of the film changes: the Curie temperature is significantly increased to ∼ 300 K and the magnetic easy axis is reoriented to the in-plane direction. Electronic, chemical, and structural analyses suggest that the c-axis lattice constant expansion, accompanying the annealing process, is the origin of the ex-situ-annealing-induced modulation of the Cr2Te3 film magnetic properties. These results demonstrate that a practical ex-situ annealing process can be effectively used to control the magnetic properties of van der Waals ferromagnetic thin films. Furthermore, the room temperature ferromagnetic ordering emerging upon annealing, along with its robustness against post-growth thermal processes, suggests that the Cr2Te3 thin film is a promising magnetic material candidate for potential application in van-der-Waals-material-based spintronic devices. © 2023 The Author(s)
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