Defect distributions in Cu(In,Ga)(S,Se)(2) solar cells with three different buffer layers
- Authors
- Kim, Yongshin; Choi, In-Hwan
- Issue Date
- Mar-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- CIGS solar cell; Admittance; Capacitance; Buffer; Interface
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.3, pp 267 - 272
- Pages
- 6
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 3
- Start Page
- 267
- End Page
- 272
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/7187
- DOI
- 10.1016/j.cap.2015.12.012
- ISSN
- 1567-1739
1878-1675
- Abstract
- Defect levels and interface states in ZnO:B/buffer/Cu(In,Ga)(S,Se)(2)/Mo/glass solar cells with a Zn(S,O)/CdS, CdS, or Zn(S,O) buffer layer were investigated by capacitanceevoltage (C-V) and admittance spectroscopy. Two acceptor levels, A1 (with E-a,E-A1 = 0.09 +/- 0.01 eV activation energy) and A2 (E-a,E-A2 = 0.26 +/- 0.02 eV) were observed from the temperature dependence of the C-V profiles. Spatial distributions of these acceptors were determined by the bias dependence of the profiles. In addition, two kinds of defect signals, S1 (E-a,E-S1 = 0.06 eV and 0.07 eV) and S2 (E-a,E-S2 = 0.25 eV), were detected from admittance spectroscopy. Each solar cell exhibited only one signal: S1 in Zn(S,O)/CdS- or Zn(S,O)-buffered solar cells, and S2 in solar cell with a CdS buffer layer. These results demonstrate that buffer layers influence the spatial distributions of intrinsic defect states in the region of the Cu(In,Ga) (S,Se)(2) absorber close to the hetero-interface. (C) 2015 Elsevier B.V. All rights reserved.
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