Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systemsopen access
- Authors
- Heo, Jungang; Cho, Youngboo; Ji, Hyeonseung; Kim, Min-Hwi; Lee, Jong-Ho; Lee, Jung-Kyu; Kim, Sungjun
- Issue Date
- Nov-2023
- Publisher
- American Institute of Physics Inc.
- Citation
- APL Materials, v.11, no.11
- Journal Title
- APL Materials
- Volume
- 11
- Number
- 11
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72094
- DOI
- 10.1063/5.0175587
- ISSN
- 2166-532X
2166-532X
- Abstract
- In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of the ZrOX-based device enables power consumption reduction owing to a lower forming voltage and compliance current. Moreover, the on/off ratio of the Ti/ZrOX/HfAlOX/TiN device (>102) is higher than that of the Ti/ZrOX/TiN device (>10). We use the 1/f noise measurement technique to clarify the transport mechanism of the Ti/ZrOX/HfAlOX/TiN device; consequently, ohmic conduction and Schottky emission are confirmed in the low- and high-resistance states, respectively. In addition, the multilevel cell, potentiation, and depression characteristics of the Ti/ZrOX/HfOX/TiN device are considered to assess its suitability as a neuromorphic device. Accordingly, a modified National Institute of Standards and Technology database simulation is conducted using Python to test the pattern recognition accuracy. © 2023 Author(s).
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