SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
- Authors
- Mahata, Chandreswar; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Choi, Yeon-Joon; Kim, Sungjun; Park, Byung-Gook
- Issue Date
- May-2019
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.114, no.18
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 114
- Number
- 18
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72123
- DOI
- 10.1063/1.5085853
- ISSN
- 0003-6951
1077-3118
- Abstract
- In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device structure. The robust SiO2 layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications. Published under license by AIP Publishing.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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