Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
- Authors
- Kim, Sungjun; Chen, Jia; Chen, Ying-Chen; Kim, Min-Hwi; Kim, Hyungjin; Kwon, Min-Woo; Hwang, Sungmin; Ismail, Muhammad; Li, Yi; Miao, Xiang-Shui; Chang, Yao-Feng; Park, Byung-Gook
- Issue Date
- Jan-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.11, no.1, pp 237 - 245
- Pages
- 9
- Journal Title
- NANOSCALE
- Volume
- 11
- Number
- 1
- Start Page
- 237
- End Page
- 245
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72128
- DOI
- 10.1039/c8nr06694a
- ISSN
- 2040-3364
2040-3372
- Abstract
- We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 degrees C up to 145 degrees C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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